Organic Field-Effect and Nanoparticle Thin-Film Transistors: Static Model

Konferenz: ANALOG 2016 - 15. ITG/GMM-Fachtagung
12.09.2016 - 14.09.2016 in Bremen, Germany

Tagungsband: ITG-Fb. 266: Analog 2016

Seiten: 6Sprache: EnglischTyp: PDF

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Romero, Adrian; Gloesekoetter, Peter (Fachhochschule Münster, Steinfurt, Germany)
Gonzalez, Jesus (Universidad de Granada, Granada, Spain)
Hilleringmann, Ulrich (Universität Paderborn, Paderborn, Germany,)

Due to the complex nature of the device physics in Nanoparticle Thin-Film Transistors (N-TFTs) and Organic Field-Effect Transistors (O-FETs), comprehensive device models for circuit simulation are not available. Traditional silicon transistor models are not suitable for these types of technology, in spite of Nanoparticle-TFTs and organic-FETs follow the same working principle. Anyhow, the introduction of new models appears to be beneficial, but parameter extraction and fitting tends to be challenging. In this paper, a mathematical DC model for organic-FETs and Nanoparticle-TFTs is presented, which is tested for both types of technology. Unlike other models, the used equations do not try to model physical phenomena such as hysteresis and field-effect mobility since they appear to be arbitrary and unpredictable. From a circuit design perspective, the main advantage of this model is its simplicity in combination with a very good fit to the current-voltage transfer characteristics.