Quantum-dot lasers monolithically grown on silicon substrates

Konferenz: ECOC 2016 - 42nd European Conference on Optical Communication
18.09.2016 - 22.09.2016 in Düsseldorf, Deutschland

Tagungsband: ECOC 2016

Seiten: 3Sprache: EnglischTyp: PDF

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Tang, Mingchu; Chen, Siming; Wu, Jiang; Liao, Mengya; Liu, Huiyun (Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK)

Monolithically integrating III-V lasers on Si is the most promising solution to overcome the issue of lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength quantum-dot laser with high output power and long lifetime.