Ge Waveguide Photodetector on Wafer-bonded Ge-on-Insulator Substrate Monolithically Integrated with Amorphous Si Waveguide

Konferenz: ECOC 2016 - 42nd European Conference on Optical Communication
18.09.2016 - 22.09.2016 in Düsseldorf, Deutschland

Tagungsband: ECOC 2016

Seiten: 3Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Autoren:
Kang, Jian; Takenaka, Mitsuru; Takagi, Shinichi (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan & JST-CREST)

Inhalt:
We demonstrate the proof-of-concept of Ge/a-Si hybrid photonic integrated circuits on Ge-on-insulator (GeOI) substrate fabricated by wafer bonding. We successfully demonstrate waveguide Ge PIN photodetector with low-dark-current operation on GeOI wafer monolithically integrated with a-Si passive waveguide.