Direct Integration of Field Effect Transistors as Electro Mechanical Transducer for Stress on Beam Structures

Konferenz: Mikro-Nano-Integration - 6. GMM-Workshop
05.10.2016 - 06.10.2016 in Duisburg, Deutschland

Tagungsband: GMM-Fb. 86: Mikro-Nano-Integration

Seiten: 4Sprache: EnglischTyp: PDF

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Haas, S. (Zentrum für Mikrotechnologien, TU Chemnitz, 09107 Chemnitz, Germany)
Hafez, N.; Loebel, K.-H.; Koegel, E.; Ramsbeck, M.; Horstmann, J. T. (Elektronische Bauelemente der Mikro- und Nanotechnik, TU Chemnitz, 09107 Chemnitz, Germany)
Reuter, D.; Gessner, T. (Zentrum für Mikrotechnologien, TU Chemnitz, 09107 Chemnitz & Fraunhofer Institut für Elektronische Nanosysteme, 09126 Chemnitz, Germany)

The detection of motion with an active electrical device like a transistor allows to shrink the transducer to a few micrometers and to integrate it into a CMOS-process. A promising method for that is using the piezoresistive effect in the channel of a transistor. We have investigated the fundamental behavior of strain sensitive transistors with respect to different transistor parameters. Therefore, the transistors have been simulated by using a modified BSIM3.3 model. The simulations showed an increase of the drain current between 3.5 % and 5.8 % for a 60 MPa stress and an acceptable shift of threshold voltage and almost no increase of leakage current. For metrological characterization pressure sensitive silicon membranes have been fabricated as strain inducing elements. Membranes were manufactured to confirm the simulation. The simulation of beam originating on the transistors show great potential.