Self-aligning integration technique for organic electronics

Konferenz: Mikro-Nano-Integration - 6. GMM-Workshop
05.10.2016 - 06.10.2016 in Duisburg, Deutschland

Tagungsband: Mikro-Nano-Integration

Seiten: 4Sprache: EnglischTyp: PDF

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Autoren:
Meyers, Thorsten; Vidor, Fabio F.; Hilleringmann, Ulrich (Paderborn University, Sensor Technology Department, Paderborn, Germany)
Kaijage, Shubi F. (NM-AIST – Communication Science and Engineering (CoSE), Arusha, Tansania)

Inhalt:
Transparent and flexible electronics attract a lot of attention from the scientific community and companies since there is the opportunity to integrate innovative products at low cost. In order to build compact and energy efficient circuits with improved cut-off frequency an integration process for transparent electronics was developed to reduce both, parasitic overlap capacitances and the adjusting requirements for transistor integration. All process steps are chosen carefully to maintain the compatibility to polymeric substrates and commonly used in-/organic semiconducting materials. For the proof of concept DNTT based TFTs were integrated providing a field-effect mobility of musat = 0.05 cm2V-1s-1 in the saturation region and a turn on voltage of Von = -1 V.