Post-CMOS integrated ALD 3D micro- and nanostructures and application for multi-electrode arrays

Konferenz: Mikro-Nano-Integration - 6. GMM-Workshop
05.10.2016 - 06.10.2016 in Duisburg, Deutschland

Tagungsband: GMM-Fb. 86: Mikro-Nano-Integration

Seiten: 4Sprache: EnglischTyp: PDF

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Jupe, A.; Figge, M.; Goehlich, A.; Vogt, H. (Fraunhofer Institute for Microelectronic Circuits and Systems, Finkenstr. 61, 47057 Duisburg, Germany)

The Fraunhofer IMS has developed a new Post-CMOS process based on DRIE and ALD technique, which can be used for the production of 3D micro- and nanostructures. As an example of this technology multi-electrode arrays (MEAs) with integrated ruthenium nano-lawn are presented for biomedical applications.