EMI, Losses and Cooling of Low-Inductance GaN-HEMTs in a CCM PFC of an On-Board Charger
Konferenz: AmE 2017 – Automotive meets Electronics - 8. GMM-Fachtagung
07.03.2017 - 08.03.2017 in Dortmund, Deutschland
Tagungsband: AmE 2017 – Automotive meets Electronics
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Bendicks, Andreas; Hoelscher, Dominik (Technical University Dortmund, On-Board Systems Lab, Dortmund, Germany)
Wiegand, Marc (Leopold Kostal GmbH & Co. KG, Dortmund, Germany)
Heberling, Dirk (RWTH Aachen, Institute of High Frequency Technology, Aachen, Germany)
Inhalt:
This work deals with the usage of miniaturized low-inductance Gallium Nitride Power Transistors in the application of a CCM PFC of an On-Board Charger. The results are compared to a design with conventional semiconductor power devices. At first, the properties of GaN-HEMTs are shortly introduced. The chosen application is defined and explained. Next, the semiconductor losses are analyzed. These are put into relation to the cooling that is influenced by the miniatur-ized packages. After that, the conducted EMI is considered. These results are integrated to reveal the advantages and disadvantages of the technology of miniaturized GaN-HEMTs for the given application.