Overview and Recent Progress on the Development of Compact GaN-based Power Converters

Konferenz: Bauelemente der Leistungselektronik und ihre Anwendungen 2017 - 7. ETG-Fachtagung
06.04.2017 - 07.04.2017 in Bad Nauheim, Deutschland

Tagungsband: ETG-Fb. 152: Bauelemente der Leistungselektronik und ihre Anwendungen 2017

Seiten: 6Sprache: EnglischTyp: PDF

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Quay, R.; Reiner, R.; Weiss, B.; Müller, S.; Benkhelifa, F.; Waltereit, P. (Fraunhofer Institute of Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany)

This paper is devoted to the recent advances of compact high-density Gallium-Nitride (GaN)-based power converters and related technologies. GaN-based diodes, and both lateral and new vertical devices are discussed. Vertical devices are recently becoming available while the reliability of lateral devices is improving, and test methods and degradation mechanisms are becoming better understood. Aspects of compact monolithic and heterogenous integration are being discussed.