InP-based narrow-linewidth widely tunable quantum dot laser device for high-capacity coherent optical communication

Konferenz: Photonische Netze - 18. ITG-Fachtagung
11.05.2017 - 12.05.2017 in Leipzig, Deutschland

Tagungsband: Photonische Netze

Seiten: 3Sprache: EnglischTyp: PDF

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Autoren:
Becker, Annette; Sichkovskyi, Vitalii; Rippien, Anna; Schnabel, Florian; Kaiser, Marcel; Reithmaier, Johann Peter (Technische Physik, Institute of Nanostructure Technologies and Analytics, Center of Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany)

Inhalt:
High-capacity coherent optical communication requires narrow linewidth widely tunable laser devices as reference lasers. InP-based quantum dot (QD) material developed for 1.55 µm enables tailoring of device properties, like gain, bandwidth and low linewidth enhancement factor (α-factor) that are favorable for such an application. Theoretical considerations taking into account the quasi zero-dimensional nature of the active zone, clearly predict a strong reduction of the laser linewidth by appropriate tailoring of the QD material design. A monolithically integrated widely tunable narrow-linewidth light source was realized on such material. It comprises four DFB lasers with on-chip micro-heaters, a 3 dB-coupler network and a semiconductor optical amplifier (SOA), covers the entire C+ telecom band and exhibits a linewidth down to 130 kHz independent of the SOA operation current.