Effect of Guanidine Sulfate on the CMP of Ru in H2O2 Based Slurry
Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium
Tagungsband: ICPT 2017
Seiten: 2Sprache: EnglischTyp: PDF
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Autoren:
Yang, Guang; He, Peng; Qu, Xin-Ping (State key lab of ASIC and system, School of Microelectronics, Fudan University, Shanghai, 200433, China)
Inhalt:
Ruthenium (Ru), on which copper can be directly electroplated[1], has low resistivity and good adhesion with copper, which makes it a very promising liner for interconnect beyond 10 nm node. Yet polishing of Ru is challenging for its hardness and inert property. The effect of potassium carbonate (PC, K2CO3) and guanidine carbonate (GC) on CMP of Ru in H2O2 based slurry have been reported[2-5]. In this work, we investigated the effect of guanidine sulfate (GS) on CMP of Ru in H2O2 based slurry and compared its effect with PC and GC.