Study on Fullerenol as the Additive to Remove BTA Film Remaining on Copper Surface in Chemical Mechanical Polishing Process
Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium
Tagungsband: ICPT 2017
Seiten: 6Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Tsai, Yueh Hsun (Department of Mechanical Information Science and Technology, Kyushu Institute of Technology, Iizuka City -8502, Japan)
Suzuki, Keisuke (Department of Mechanical Information Science and Technology, Kyushu Institute of Technology, Iizuka City 820-8502, Japan)
Chen, Chao-Chang A. (Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei City 10607, Taiwan)
Inhalt:
BTA, benzotriazole, is recognized as an antioxidant agent for metallic surface modification, especially for copper and its alloys, preventing from the undesirable oxidation. In the copper chemical mechanical polishing (Cu-CMP) of semiconductor manufacturing process, BTA existing in polishing slurry plays a big role in the planarization, but its contaminations are not allowed remaining on the finished surface. The conventional post-cleaning solution containing TMAH and HF have been investigated to remove residual BTA, however, both are highly hazardous materials. This study aims to use polyhydroxylated fullerene, C60(OH)12, as the moderate additive for the Cu post-cleaning process to get rid of adhered BTA contamination. From XPS results, the BTA removal effect has been dectected, and also proved by contact angle and UV/Vis spectroscopy. Keywords: Fullerenol, post Cu CMP cleaning process, Benzotriazole, ICPT 2017, XPS, contact angle.