Application of Slurry Injection System (SIS) to Advanced Deep-Trench (DT) CMP

Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium

Tagungsband: ICPT 2017

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Jha, Amarnath; Tseng, Wei-Tsu; Wu, Changhong; Yang, Ji Chul (GLOBALFOUNDRIES, Advanced Module Engineering, Malta, NY, USA)
Stoll, Derek (GLOBALFOUNDRIES, Fab10. East Fishkill, NY, USA)
Philipossian, Ara (Araca Inc., Tucson, AZ, USA)

Inhalt:
A slurry injection system (SIS) from Araca Inc. is installed on a single-platen, singlecarrier, 300 mm polisher and evaluated for 14 nm deep-trench (DT) CMP process. A 40 % reduction in slurry flow rate with equivalent removal rates and improved withinwafer oxide uniformity are demonstrated. A 400-wafer marathon run with SIS at 40 % reduced slurry flow rate shows stable rates without degradation in within-wafer uniformity and defectivity. Keywords: Deep-trench isolation, Chemical-mechanical Planarization, Slurry Injection System, slurry application, cost reduction.