Planarization of SiC wafer using photo-catalyst incorporated pad
Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium
Tagungsband: ICPT 2017
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Zhou, Yan; Pan, Guoshun; Zou, Chunli; Luo, Guihai; Luo, Haimei (State Key Laboratory of Tribology, Tsinghua University, Beijing, China & Shenzhen Key Laboratory of Micro/Nano Manufacturing Research Institute of Tsinghua University in Shenzhen, Shenzhen, China & Guangdong Provincial Key Laboratory of Optomechatronics, Shenzhen, China)
Inhalt:
Abstract -A novel photo-catalyst incorporated pad is developed for planarization of onaxis Si-face SiC wafer, in order to obtain higher removal rate (MRR) and ultra-smooth surface. The preparation of the photo-catalyst TiO2 incorporated pad is introduced, and the characteristics of the new pad are studied. Planarization performances of SiC wafer using the photo-catalyst incorporated pad under UV light are investigated. MRR by the catalyst incorporated pad is much higher than that by the conventional pad. Meanwhile, the low roughness ultra-smooth surface with atomic step structure could be obtained. The relative removal mechanism of chemical active pad towards the polished SiC surface is also discussed. Keywords: SiC, planarization, polishing, photo-catalyst, pad, removal