Control of Silica Particle Deposition for Fabrication of Post CMP Cleaning Ability Evaluation Wafer
Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium
Tagungsband: ICPT 2017
Seiten: 3Sprache: EnglischTyp: PDF
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Autoren:
Cho, Younsun; Chae, Seung-Ki; Shin, Cheolmin (School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea)
Jin, Yinhua; Kim, Taesung (School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea & SKKU Advanced Insititute of Nano Technology(SAINT), Sungkyunkwan University, Suwon 16419, South Korea)
Inhalt:
Chemical mechanical planarization (CMP) is one of the essential process to semiconductor chip manufacturing process. In the CMP process, the post CMP clenaing process for removing abrasive particles after the planarization process becomes more important. For the cleaning evaluation, wafer with the same contamination condition are requied. This study establishes a means for standard wafer that contaminated by nanoparticle to evaluate post CMP cleaning. It also propose a standard wafer manufacturing method for each cleaning conditions. Keywords: Post CMP Cleaning, Standard wafer, Cleaning evaluation, Cleaning condition, Abrasive particle.