Development of Novel Cleaning Solution for Post Chemical Mechanical Planarization Silicon Wafer
Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium
Tagungsband: ICPT 2017
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Song, Junghwan; Kim, Taesung (School of Mechanical Engineering, Sungkyunkwan University (SKKU), 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-Do, 16419, Republic of Korea)
Han, Na; Park, Kihong; Yi, Sokho (LTCAM CO., Ltd., 45, Sandan-ro 15beon-gil, Pyeongtaek-si, Gyeonggi-do, Repulic of Korea)
Inhalt:
For the post chemical mechanical planarization cleaning(CMP), one of the big issue in the semiconductor manufacturing process, the cleaning solution has been developed based on the alkaline chemical and surfactant. The cleaning effectiveness was evaluated by experimental procedure and XPS analysis comparing with existing cleaning solution which is SC-1. We found that developed cleaning solution is sufficiently effective to remove the residues such as ceria slurry on the oxide film which performed CMP. Keywords: Post CMP cleaning, Oxide film, PE-TEOS, Ceria slurry, XPS analysis