Effect of colloidal silica particles on subsurface damage of fused silica optics during CMP process

Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium

Tagungsband: ICPT 2017

Seiten: 4Sprache: EnglischTyp: PDF

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Autoren:
Chunli, Zou; Li, Xu; Guoshun, Pan (State Key laboratory of Tribology, Tsinghua University, 100084 Beijing, China & Research Institute of Tsinghua University in Shenzhen, 518057 Shenzhen, China & Guangdong Provincial Key Laboratory of Optomechatronics, 518057 Shenzhen, China)
Chengxi, Kang; Xin, Zhang (State Key laboratory of Tribology, Tsinghua University, 100084 Beijing, China)

Inhalt:
Abstract- In this paper, the relationship between the surface defects characterization after CMP and the size of the SiO2 abrasive was investigated in detail. The combination of HF etching and optical surface profiler is used to detect and analysing the subsurface defects. Atomic force microscope (AFM) was used for measuring the surface morphology. The results indicate that, with the decrease of SiO2 abrasive size, obtaining smaller surface roughness and inducing much fewer subsurface defects. And the deeper etching, the rougher sub-surface. Keywords: Planarization, Chemical-mechanical Polishing, Fused silica, subsurface damage