The Effect of chelating Agent in TMAH Based Post Cu-CMP Cleaning Solution
Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium
Tagungsband: ICPT 2017
Seiten: 3Sprache: EnglischTyp: PDF
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Autoren:
Jeon, Seongsik (School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-Do, 16419, Republic of Korea & LTCAM Co., Ltd., Pyeongtaek-si, Gyeonggi-Do, 17744, Repulic of Korea)
Jeon, Sanghyuk; Lim, Ahhyeon; Yi, Sokho (LTCAM Co., Ltd., Pyeongtaek-si, Gyeonggi-Do, 17744, Repulic of Korea)
Kim, Taesung (School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-Do, 16419, Republic of Korea)
Inhalt:
Post chemical mechanical planarization (PCMP) cleaning step is very important part in CMP. Organic residue and many particles can remain the Cu wafer surface after CMP. Because many particles and additives are contained in the slurry. It can change the Cu wafer surface to hydrophobic after CMP. TMAH normally is used in the cleaning solution to solve these problems. However, TMAH can make Cu ion that can be deposited on the Cu surface again. In this study, chelating agent is used to prevent re-deposition of Cu ion on the Cu surface. Keywords: Post CMP cleaning, slurry, CMP, Cu, TMAH, BTA