Development of Modularized Electrode in Electro-Kinetic Force Assisted Chemical Mechanical Planarization for Through-Silicon-Via Wafer Planarization
Konferenz: ICPT 2017 - International Conference on Planarization/CMP Technology
11.10.2017 - 13.10.2017 in Leuven, Belgium
Tagungsband: ICPT 2017
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Chen, Chao-Chang A.; Xue, Min-Yue; Lin, Yu-Ming; Pu, Wei-Chin W. (Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan)
Inhalt:
This paper aims to enhance the Electro-Kinetic Force Assisted Chemical Mechanical Planarization (EKF-CMP) process with a modularized electrode design to generate electro-osmosis flow of slurry circulation for improving the removal rate of trenchsilicon- via, TSV Cu-CMP. Experimental test of TSV-CMP with copper blanket wafer and pattern substrates have been performed and investigated. Results have shown that EKFCMP can achieve material removal rate (MRR) up to 24.19% of blanket Cu-CMP as compared with the conventional CMP. For TSV patterned Cu-CMP, dishing can be reduced by 29.7% compared with conventional CMP. Finally, the EKF-CMP has been verified to improve the MRR and also reducing the dishing of TSV-CMP with this modularized electrode design. Results of such EKF-CMP can be applied on integration devices for hybrid IC demands. Keywords: EKF-CMP, Cu CMP, TSV-CMP, Removal Rate, Dishing