Chemical Mechanical Polishing of SiC Substrate Using Enhanced Slurry Containing Nanobubbles with Active Gas Generated by Plasma

Inhalt:
The purpose of this study is to develop a high-efficiency device for the chemical mechanical polishing (CMP) of SiC (silicon carbide) substrate by utilizing nanobubbles containing an active gas generated by plasma in a slurry, called as enhanced slurry. In particular, our newly developed device is the slurry supplying equipment that can generate enhanced slurry. Therefore, it can be easily applied to a commercially available polisher. In previous research at other institutes, a high-efficiency CMP method for SiC substrate assisted by plasma was developed, however, the previous method requires specialized CMP equipment. According to the results of our CMP tests, the removal rate can be increased using our prototype device. In this study, we investigate the effect of CMP of SiC on the relation between the nanobubbles which enclose an active gas, and the different slurry properties. Keywords: CMP, Removal Rate, Enhanced Slurry, Nanobubbles, Silicon Carbide