Development of an Extended Gate Field Effect Transistor (EGFET) based low-cost pH-sensor
Konferenz: MikroSystemTechnik 2017 - Kongress
23.10.2017 - 25.10.2017 in München, Deutschland
Tagungsband: MikroSystemTechnik 2017
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Mokhtarifar, Naser; Goldschmidtboeing, Frank; Woias, Peter (University of Freiburg, Department of Microsystems Engineering (IMTEK), Laboratory for Design of Microsystems, Freiburg, Germany)
Inhalt:
A novel method is presented to fabricate a low-cost pH-sensor utilizing differential pair MOSFETs. In this method, the gate terminal of two MOSFETs is extended and connected to two Indium-Tin-Oxide (ITO) electrode as pH-sensitive material. All the components are commercially available, hence no extra costly cleanroom process was required. In this research, differential sensing between two EGFETs with ITO as gate material is presented to reduce common mode noise and to overcome long-term drift while no glass reference electrode is in use. The ITO sheet as the sensory section was characterized in the pH-range of 8.35 to 9.45. The sensitivity and long-term performance are investigated.