Integration of MEMS models in simulations on electronic system level

Konferenz: MikroSystemTechnik 2017 - Kongress
23.10.2017 - 25.10.2017 in München, Deutschland

Tagungsband: MikroSystemTechnik 2017

Seiten: 4Sprache: EnglischTyp: PDF

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Autoren:
Blochmann, Tino; Gerth, Stephan; Schneider, Peter (Fraunhofer Institute for Integrated Circuits IIS, Division Engineering of Adaptive Systems EAS, Dresden, Germany)

Inhalt:
This paper presents an efficient approach to extract SystemC AMS models from Finite Element (FE) descriptions developed in the design process of the MEMS structure. The resulting model must be capable for simulations on Electronic System Level (ESL). The main challenge is to generate a model, which shows within a specified range of operation the same behaviour as the Finite Element model but can be simulated much faster. Starting from the matrices of the Finite Element Model (FEM) Model Order Reduction (MOR) techniques are applied to generate a reduced state space description, which is adapted to the Degrees of Freedom (DoF) to be considered and the appropriate frequency range. This state space description can be integrated into SystemC AMS models and can be solved with the available state space solver. Furthermore the focus of this paper is the reachable accuracy of the simulated behaviour depending from the selected time resolution.