The Promise of GaN in Light of Future Requirements for Power Electronics

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 7Sprache: EnglischTyp: PDF

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Autoren:
Deboy, Gerald; Kasper, Matthias (Infineon Technologies Austria AG, Villach, Austria)
Garcia, Alfredo Medina; Schlenk, Manfred (Infineon Technologies AG, Neubiberg, Germany)

Inhalt:
This paper will discuss the benefits of e-mode GaN HEMTs in low power and high power applications such as USB-PD adapter and server power supplies. In comparison to the next best silicon alternative, this paper will show quantitatively how much better systems being built with GaN devices will be. It will also provide further insight into corresponding topologies, choice of magnetics and switching frequencies to take the full benefit of the next generation of power devices.