The Promise of GaN in Light of Future Requirements for Power Electronics

Inhalt:
This paper will discuss the benefits of e-mode GaN HEMTs in low power and high power applications such as USB-PD adapter and server power supplies. In comparison to the next best silicon alternative, this paper will show quantitatively how much better systems being built with GaN devices will be. It will also provide further insight into corresponding topologies, choice of magnetics and switching frequencies to take the full benefit of the next generation of power devices.