Power Loss Analysis of 60 V Trench Field-Plate MOSFETs Utilizing Structure Based Capacitance Model for Automotive Application
Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland
Tagungsband: ETG-Fb. 156: CIPS 2018
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Kobayashi, Kenya; Sudo, Masaki (Graduate School of Engineering, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu, Japan)
Omura, Ichiro (Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-)
We propose a structure based capacitance model for output capacitance (Coss) and reverse transfer capacitance (Crss) in 60-V class source-field-plate (SFP) and gate-field-plate (GFP) MOSFETs. C-V curves obtained by the model showed good agreement with TCAD simulation. Output charge (Qoss), stored energy (Eoss) and turn-off waveforms also could be calculated very well. In assumption of 30 V, 70 A and 20 to 200 kHz switching operation, power losses related to the FPMOSFET’s features were estimated by utilizing the model. Moreover, we compared advantages of both FP-MOSFETs for several use conditions.