Dielectric Properties and Partial Discharge Inception Voltage of Aluminum Nitride Insulating Substrate at High Temperatures

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 6Sprache: EnglischTyp: PDF

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Abe, Tsuyoshi; Suenaga, Michiya; Akihiro Imakiire; Kozako, Masahiro; Hikita, Masayuki (Kyushu Institute of Technology, 1-1 Sensuityou, Tobata, Kyusyu, Fukuoka, 804-8550, JAPAN)
Shiota, Hiroki; Nishimura, Takashi; Muto, Hirotaka (Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo, 661-8661, JAPAN)

Recently, as power modules tend to have higher output density, large-capacity and downsizing of the module are demanded. When the power module is operated at higher temperatures, evaluation of high temperature electrical properties of the power module becomes important. However, there are very few reports on the high temperature insulation properties of the ceramic insulating substrate for application of power module. This paper presents dielectric properties of ceramic insulating substrates consisting of aluminum nitride (AlN) used for power module up to high temperature of 450 ℃. Besides, partial discharge inception voltage (PDIV) of the ceramic substrate without encapsulation is also measured at high temperatures to 250 ℃ in air. Thus obtained results are discussed with the temperature dependence of the permittivity and ac conductivity of the ceramic substrate considered.