Integrated LED Driver based on 800V Si L-IGBTs

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 2Sprache: EnglischTyp: PDF

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Aliyu, Attahir Murtala (Power Electronics, Machines and Control Group, University of Nottingham, Nottingham, UK)
Elliott, Alwyn; Rajaguru, Pushparajah (Department of Electrical and Electronic Engineering, Imperial College, London, UK)
Pathirana, Vasantha; Udugampola, V. Nishad (University of Cambridge, Cambridge, UK)

The vast majority of commercially available LED drivers contain active solid-state switches. Indeed, to have functionalities such as dimming, a switch mode power supply (SMPS) is required. Vertical devices, MOSFETs, are the most widely used option. However, there are some limitations associated with vertical devices in terms of layout, chip size and packaging. On the other hand, lateral devices provide the possibility to be integrated with the controller and other circuit components due to all terminals being on one side. Lateral IGBTs (L-IGBTs) have the advantage over lateral MOSFETs (L-MOSFETs) of lower on-state resistance and higher current density, better temperature performance and higher nominal voltage rating. These advantages, together with the reduced device footprint, has led to increased attention towards of L-IGBTs in high voltage low power applications [1], which are a preferential choice for size sensitive products such as LED lighting, mobile phones, implantable cardioverter defibrillators (ICDs) and chargers [2, 3]. This work focuses on the integration of 800V Si L-IGBTs, the controller and the driving circuit considering thermal performance and reliability. The integration exercise is carried out with the consideration that the final circuit is to be fitted into a commercial GU10 LED light bulb.