A High Performance 1200 V/120 A SiC Power Module Based On a Novel Multi-DBCs Hybrid Packaging Structure

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Li, Yuxiong; Huang, Zhizhao; Chen, Lichuan; Chen, Cai; Kang, Yong (SEEE, Huazhong University of Science and Technology, Wuhan, China)
Zou, Kaifeng (Naval Aeronautical Engineering University Qingdao Branch, Qingdao, China)
Luo, Fang (Department of Electrical Engineering, University of Arkansas, Fayetteville, USA)
Li, Sichao (Huazhong University of Science and Technology, Wuhan, China)

Inhalt:
This paper proposed a novel ultra-low parasitic hybrid packaging SiC power module based on multi-DBCs. This approach stacks two DBCs to form a multilayer structure, and a low parasitic power loop is designed through mutual inductance cancellation. Since, the chips are placed on the top copper surface of bottom DBC, the thermal resistance can be also reduced, compared to the direct multilayer DBC structure. Moreover, DC decoupling capacitors integration, gate terminal kelvin connection and laminated DC busbar are utilized. Therefore, the power module can achieve fast switching and switching losses are much lower than commercial power module. Based on this structure, a new 1200 V/120 A SiC power Module with only 1.8 nH stray inductance and very fast switching capability is presented. Double Pulse Test (DPT) results show that the switching speed of the proposed power module is 1.8 times faster than the commercial 1200V/120A SiC module CAS120M12BM2, and the switching loss has a 58% reduction. Additionally, the overshoot of drain source voltage reduced about 57%.