Investigations on the Evolution of Dynamic Ron of GaN Power Transistors during Switching Cycles

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 6Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Elharizi, Malika; Khatir, Zoubir; Lallemand, Richard; Ousten, Jean-Pierre (IFSTTAR, 25 Allée des Marronniers 78000 Versailles, France)

The dynamic drain-source resistance (RON_DYN) phenomenon remains an issue for the power devices based on GaN (Gallium Nitride) technology and prevents their diffusion in the market. Although many works in literature focused on the phenomenon itself, the effect of successive switching on performance has aroused few interests. The purpose of this paper is to point out the consequences of the dynamic resistance (or current collapse) evolution due to successive switching cycles on a GaN-based HEMT (High Electron Mobility Transistors) power component. In particular, this paper highlights the effect of some parameters of switching such as the off-state voltage, the switching frequency, the duty cycle and the temperature on the evolution of the dynamic drain-source resistance. The evolution of the dynamic drainsource resistance is due to the charges trapping/detrapping mechanisms within the structure but also to a self-heating of the component. Thus, in this paper we present a method to estimate the weight of each phenomenon. From this analysis, in the case of the tested devices, the thermal effect seems to be negligible compared to that of trapping/detrapping mechanisms.