An Investigation of Frequency Response Analysis Method for Junction Temperature Estimation of SiC Power Device
Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland
Tagungsband: ETG-Fb. 156: CIPS 2018
Seiten: 5Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Lu, Xiang; Chen, Cuili; Pickert, Volker; Tsimenidis, Charalampos (School of Engineering, Newcastle University, Newcastle upon Tyne, Unit Kingdom)
Al-Greer, Maher (School of Science, Engineering and Design, Teesside University, Middlesbrough, Unit Kingdom)
This paper investigates a new technique for detecting the junction temperature of Silicon Carbide (SiC) MOSFET devices using frequency response analysis. It has been reported that the junction temperature of a SiC MOSFET can be determined by estimating the frequency response using a network analyser. The presented technique benefits from the temperature dependency of the internal gate impedance of the SiC device. Change in the junction temperature causes a change in the internal gate impedance, and this, in turn, will change the characteristics of the estimated frequency response. The proposed method is using the magnitude of the frequency spectrum rather using reflectometry used by network analysers. A single-chip SiC MOSFET packaged in a TO-247-3 housing is used in this investigation along with a Tektronix AFG3102 for signal sweeping and a PicoScope3206b for data logging and frequency response estimation.