Thermo-mechanical stress and deformation behavior of joined semiconductor devices using different die attach technologies

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Naumann, Falk; Lorenz, Georg; Bernasch, Michael; Boettge, Bianca (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Germany)
Ebensperger, Christina; Oehling, Stefan (SEMIKRON Elektronik GmbH & Co. KG, Nürnberg, Germany)

Inhalt:
During manufacturing and packaging of power electronic devices, stresses are induced into power semiconductors influencing their electrical and thermal performance resulting in potentially reduced reliability or life time decrease of the power module. In order to get a deeper understanding of the thermo-mechanical stress and deformation behavior of joined semiconductor devices, temperature dependent deformation measurements were applied to examine the induced stress state of different die attach technologies. These investigations were combined with FEA-modelling to compare the measured curvature data with related stress distributions at the device. As one finding, significant differences in the resulting deformation behavior of soldered and sintered samples were measured for identical components. The obtained measurement data can be used to enhance the accuracy of complex FEA-models by adjusting model assumptions.