Comparison of the Surge Current Ruggedness between the Body Diode of SiC MOSFETs and Si Diodes for IGBT

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 7Sprache: EnglischTyp: PDF

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Hofstetter, Patrick; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Center of Energy Technology, Germany)

The aim of this paper is to derive a statement, whether body diodes of future SiC MOSFETs will achieve similar I(Exp 2) t values as freewheeling diodes currently used in IGBT modules. In the first part, a short experimental study will be shown, where two 1200V SiC MOSFETs of different manufacturers are surge current tested under different conditions, like different surge current durations, temperatures, Vgs voltages and multiple stresses. The second part deals with the scaling of the measurements to the surge current capability of typical IGBT modules for traction converters.