Signal Sweeping Technique to Decouple the Influence of Junction Temperature and Bondwire Lift-off in Condition Monitoring for Multichip IGBT Modules

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 6Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Autoren:
Chen, Cuili; Pickert, Volker; Tsimenidis, Charalampos; Lu, Xiang (Newcastle University, Newcastle upon Tyne, United Kingdom)
Al-Greer, Maher (Teesside University, Middlesbrough, United Kingdom)
Logenthiran, Thillainathan (Newcastle University Singapore, Singapore)
Ng, Chong; Jia, Chunjiang (ORE catapult, Newcastle upon Tyne, United Kingdom)

Inhalt:
This paper proposes a measurement technique applied to an unbiased multi-chip power module that is able to distinguish between junction temperature variation and bondwire lift-off. Compared with traditional approaches, the proposed technique requires only one test to monitor and discriminate these two conditions. The proposed technique relies upon the injection of high frequency/low power signals into the Gate-Emitter terminals of an IGBT and then analysing the corresponding frequency response of the Gate-Emitter circuit. It is verified that the imaginary part of the Gate-Emitter impedance (ZGE, Imag) changes in opposite directions. A high number of bondwire lift-offs leads to an increase of ZGE, Imag, whereas junction temperature rise leads to a drop in ZGE, Imag. Furthermore, it is shown that the real part of Gate-Emitter impedance ZGE, Real increases with both increased number of bondwire lift-offs and rise in junction temperature. In this paper, a small-signal model for the Gate-Emitter circuit of a 3.3 kV / 100 A IGBT power module is developed and its frequency response is examined and analysed with SaberRD. Furthermore, practical tests are also carried out with a network analyser.