A 3.3 kV SiC MOSFET Half-Bridge Power Module
Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland
Tagungsband: ETG-Fb. 156: CIPS 2018
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Mouawad, Bassem; Hussein, Abdallah; Castellazzi, Alberto (PEMC Group, University of Nottingham, Nottingham, Unit Kingdom)
SiC MOSFET technology is rapidly progressing towards higher voltage ratings, with the potential to deliver a major impact on a number of society pivotal application domains, such as railway/naval traction, power distribution/transmission, renewable energies. Recently, 3.3 and 6.5 kV power MOSFETs with characteristics superior to counterpart Si IGBTs have been introduced. This work presents the development of a half-bridge power module based on the 3.3 kV transistors. The design specifically addresses a number of aspects key to the development of SiC bespoke packaging solutions: device parallel performance; reliance on body-diode for freewheeling; high switching frequency capability; high dI/dt and high dV/dt compatible design by containment of parasitic inductance and, equally importantly, common mode capacitance. The validity of the proposed design is demonstrated in preliminary parametric switching tests.