A transfer-molded high temperature SiC power module withstanding up to 250 °C
Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland
Tagungsband: CIPS 2018
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Mitamura, Kazuhiro (National Institute of Advanced Industrial Science and Technology (AIST), Japan & Renesas Electronics Corporation, Japan)
Ozaki, Yui (Sumitomo Bakelite Co., Ltd., Japan)
Murakami, Yoshinori (National Institute of Advanced Industrial Science and Technology (AIST), Japan & Nissan Motor Co., Ltd., Japan)
Takahashi, Hiroki (Fuji Elecric Co., Ltd., Japan)
Tanisawa, Hidekazu (National Institute of Advanced Industrial Science and Technology (AIST), Japan & Sanken Electric Co., Ltd., Japan)
Koui, Kenichi (National Institute of Advanced Industrial Science and Technology (AIST), Japan & Calsonic Kansei Corporation, Japan)
Kato, Fumiki; Sato, Shinji; Yamaguchi, Hiroshi; Sato, Hiroshi (National Institute of Advanced Industrial Science and Technology (AIST), Japan)
Inhalt:
A transfer-molded 2-in-1 type SiC power module withstanding 1000 thermal cycles between −40 °C and +250 °C has been developed. Because SiC devices can be used for unconventionally wide thermal cycle temperature range ΔT, the matching of the coefficients of thermal expansion (CTE) and the elastic moduli (E) between various components is crucial. Hence, a special mold resin with a high glass-transition temperature (Tg), comparable CTE with ceramics substrate, and low elastic modulus has been developed, and it has been applied to the modules. Moreover, adhesion strength between mold resin and several material surfaces was studied. After the thermal cycle test, the electrical static characteristics of the module were obtained, which were expected from the SiC-MOSFET bare die specification. Keywords: Transfer mold; 250 °C operation; CTE matching; High-temperature resistant resin;