Design of a low inductive switching cell dedicated to SiC based Current Source Inverter (CSI)

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 6Sprache: EnglischTyp: PDF

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Lefevre, Guillaume (CEA/LITEN/Department of Solar Technologies/Photovoltaic Systems Laboratory, France)

In this paper, a novel PCB layout dedicated to Current Source Inverter (CSI) topology is presented with the motivation of optimizing the overall stray inductances while removing the potential asymmetries between the inverter legs. Based on the analysis of the CSI switching cell’s characteristics, a simplified analytical model is also introduced to predict the inductive performances of the proposed geometry. A prototype board was produced and the parasitic measurements were made using a precision impedance analyzer, confirming the reduction of the PCB stray inductance to 5nH. Finally, incorporating the proposed PCB layout, the experimental switching waveforms of a 5kW photovoltaic (PV) CSI equipped with Silicon Carbide SiC) MOSFETs illustrate the effectiveness of the solution and the potential for high-frequency/high-density converters.