Innovative Reliable Nitride based Power Devices and Applications ‒ The EU Public Funded Project ‘InRel-NPower‘

Konferenz: CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems
20.03.2018 - 22.03.2018 in Stuttgart, Deutschland

Tagungsband: ETG-Fb. 156: CIPS 2018

Seiten: 4Sprache: EnglischTyp: PDF

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Rittner, Martin; Kessler, Ulrich (Robert Bosch GmbH, Renningen, Germany)
Naundorf, Joerg; Kriegel, Kai; Schulz, Martin (Siemens AG, Munich, Germany)
Meneghesso, Gaudenzio (University of Padua, Italy)

GaN power semiconductors with lower blocking voltages are well established meanwhile in low- and mid-power applications for highly efficient power conversion. However, especially for industrial and automotive drive inverters – in a power class of 20 kW up to 30 kW – semiconductor intrinsic normally off characteristics for higher blocking voltages than 650 V under distinct elevated reliability levels are mandatory. As well, low-inductance power module design elements – including the DC-link capacitor and its connectors in the entire commutation cell – down to few nH are mandatory for the higher switching frequency ability and the steeper voltage and current gradients in comparison to Silicon power devices. Therefore the partner in the EU public funded project ‘InRel-NPower’ research on new robust and reliable GaN-on-Si devices for higher blocking voltages than 650 V – with respect to DC-link voltage levels towards 800 V – and assembly and interconnection technologies for low-inductance module concepts enabling those new devices towards system level. This poster presentation will give an overview over the main objectives and first progresses of the ‘InRel-NPower’ project in the research field of assembly and interconnection for low-inductance GaN power module design.