Transistor-level simulation of LC-tank VCO electron spin resonance detectors

Konferenz: ANALOG 2018 - 16. GMM/ITG-Fachtagung
13.09.2018 - 14.09.2018 in München/Neubiberg, Deutschland

Tagungsband: GMM-Fb. 91: ANALOG 2018

Seiten: 2Sprache: EnglischTyp: PDF

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Chu, Anh; Anders, Jens (Institute of Smart Sensors, Univeristy of Stuttgart, Germany)
Schlecker, Benedikt (Institute of Smart Sensors, Univeristy of Stuttgart, Germany & Institute of Microelectronics, University of Ulm, Germany)

This paper discusses recent advances in the transistor-level simulation of voltage-controlled oscillators (VCOs) used as detectors for electron spin resonance (ESR) detection. Starting from a physical model that describes the VCO-spin interaction, the conventional VCO model is extended to account for the amplitude and frequency shifts induced by the magnetization associated with the spin ensemble. The proposed approach is validated using GoldenGate and SpectreRF simulations on a 130 nm CMOS prototype VCO that show very good agreements to measured data.