Al1-xScxN thin films for pyroelectric IR detectors
Konferenz: MikroSystemTechnik 2019 - Kongress
28.10.2019 - 30.10.2019 in Berlin, Deutschland
Tagungsband: MikroSystemTechnik Kongress 2019
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Broeker, Sebastian (Materials and Processes for Nanosystem Technologies, Technische Fakultät Universität Kiel, Kaiserstr. 2, 24143 Kiel, Germany)
Fichtner, Simon; Wagner, Bernhard (Materials and Processes for Nanosystem Technologies, Technische Fakultät Universität Kiel, Kaiserstr. 2, 24143 Kiel, Germany & Fraunhofer-Institut für Siliziumtechnologie (ISIT), Fraunhoferstr. 1, 25524 Itzehoe, Germany)
Bette, Sebastian; Tiedke, Stephan; Tappertzhofen, Stefan (aixACCT Systems GmbH, Talbotstr. 25, 52068 Aachen, Germany)
Inhalt:
Aluminum nitride (AlN) is a CMOS compatible pyroelectric material with excellent dielectric and piezoelectric properties. This makes AlN an attractive candidate for MEMS applications. Compared to PZT, AlN has a lower pyroelectric coefficient but a comparable signal to noise ratio due to its superior dielectric properties. AlN can be doped with scandium, which leads to an increase of the piezoelectric coefficient [3]. As flattening of the ionic potential energy landscape implies a greater thermally induced ionic mobility, Sc doping has also the potential to improve the pyroelectric performance. The deposition of the Al1-xScxN is performed by co-sputtering and easily allows to control and vary the Scconcentration. The highest pyroelectric coefficient with a value of p = 19.3 muC/m2K is measured at a Sc-concentration of x = 0.36, which is more than a factor of two higher compared to AlN. For pure AlN a value of p = 9.7 muC/m2K is determined.