Integration of graphene in CMOS compatible device environments

Inhalt:
In this work, the influences of CMOS compatible substrates, metallization layers and encapsulation layers on the electrical quality of graphene were investigated. For this purpose, layer resistivity measurements and charge carrier mobility measurements were performed on different substrates to determine their influence and also how a surface modification of the substrates influences the electrical behavior of graphene devices. Graphene/metal transitions were also characterized electrically and chemically, as well as the electrical quality of isolator layers on graphene.