Investigation on static and dynamic behavior of integrated current sensor in Automotive IGBT module with SPICE based model
Konferenz: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
24.03.2020 - 26.03.2020 in Berlin, Deutschland
Tagungsband: ETG-Fb. 161: CIPS 2020
Seiten: 5Sprache: EnglischTyp: PDF
Adachi, Shinichiro; Otsuki, Masahito (Fuji Electric Co. Ltd., Matsumoto, Japan)
Averous, Nurhan Rizqy; De Doncker, Rik W. (Institute for Power Generation and Storage Systems (PGS), E.ON Energy Research Center, RWTH Aachen University, Aachen, Germany)
Integrated current sensors have been widely used in Insulated Gate Bipolar Transistor (IGBT) modules for xEV power-train to protect IGBTs from harsh operation conditions, such as short circuit or overcurrent with fast response. However, static and dynamic behaviours of the integrated current sensor and its detection circuit has not been completely clear. In order to investigate these behaviours, a SPICE-based simulation model of an IGBT module is proposed and the model is validated in static and dynamic characterization conducted with an automotive Reverse-Conducting (RC) IGBT module. This paper describes the influence of the detection circuit on the behaviours of the integrated current sensor. In addition, the effectiveness of a virtual ground circuit to improve the accuracy of current measurement is also demonstrated. As a result, with a new current sensor model contributing to an improved current sensing accuracy, the integrated current sensor has a potential to replace the conventional hall current sensors in the automotive power train application.