A Compact Model for Scalable MTJ Simulation

Konferenz: SMACD / PRIME 2021 - International Conference on SMACD and 16th Conference on PRIME
19.07.2021 - 22.07.2021 in online

Tagungsband: SMACD / PRIME 2021

Seiten: 4Sprache: EnglischTyp: PDF

Garcia-Redondo, Fernando; Prabhat, Pranay (Arm Ltd, Cambridge, UK)
Bhargava, Mudit (Arm Inc, Austin, USA)
Dray, Cyrille (Arm Ltd, La Paros, France)

This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in large VLSI designs, addressing the need for an industry-ready model accounting for real-world reliability and scalability requirements. Device dynamics are described by the Landau-Lifshitz-Gilbert- Slonczewsky (s-LLGS ) stochastic magnetization considering Voltage-Controlled Magnetic Anisotropy (VCMA) and the nonnegligible statistical effects caused by thermal noise. Model behavior is validated against the OOMMF magnetic simulator and its performance is characterized on a 1-Mb 28 nm Magnetoresistive- RAM (MRAM) memory product.