Bias Temperature Instability Characterization and Modeling for 0.18um CMOS Under Extreme Thermal Stress Conditions

Konferenz: SMACD / PRIME 2021 - International Conference on SMACD and 16th Conference on PRIME
19.07.2021 - 22.07.2021 in online

Tagungsband: SMACD / PRIME 2021

Seiten: 4Sprache: EnglischTyp: PDF

Tran, Yen; Nomura, Toshihiro; Cherchali, Mohamed Salim; Tassin, Claire (Etudes et Production Schlumberger Clamart, France)
Deval, Yann; Maneux, Cristell (Univ. Bordeaux, Bordeaux INP, UMR CNRS 5218, IMS Laboratory, Talence, France)

We investigated the significance of 0.18um CMOS (Complementary Metal-Oxide-Semiconductor) degradation due to bias temperature instability (BTI) under extreme temperature operations (150 degC and 210 degC). The transistors have been applied dedicated DC bias and temperature conditions to investigate the wear-out mechanism in specific severe environment for oilfield applications. The aging tests have been monitored up to 1,000 hours. These results are preliminarily used to develop equations reflecting aging laws to be included in commercial software tool for further investigation at logic circuit level.