Modeling Ni/β-Ga2O3 SBD interface properties

Konferenz: SMACD / PRIME 2021 - International Conference on SMACD and 16th Conference on PRIME
19.07.2021 - 22.07.2021 in online

Tagungsband: SMACD / PRIME 2021

Seiten: 4Sprache: EnglischTyp: PDF

Labed, Madani; Sengouga, Nouredine; Meftah, Afak (Laboratory of Semiconducting and Mettalic Materials University of Biskra, Algeria)
Park, Jun Hui; Kim, Hojoong; Rim, You Seung (Department of Intelligent Mechatronics Engineering, and Convergence Engineering for Intelligent Drone Sejong university, Rebublic of Korea)
Kyoung, Sinsu (Research and Development, Powercubesemi Inc, Sujeong-gu, Seongnam-si, Republic of Korea)

In this work, Ni/β-Ga2O3 Schottky diode deposited by electron-beam evaporation was studied. A detailed numerical simulation is carried out to reproduce the current-voltage measurement of Ni/β-Ga2O3 Schottky diode and extract the Ni/β-Ga2O3 interface properties. For more agreement between simulation and measurement the effect of Ni workfunction, Si-doped β-Ga2O3 surface electron affinity and traps concentration were studied.