A First Order-Curvature Compensation 5ppm/degC Low-Voltage & High PSR 65nm-CMOS Bandgap Reference with one-point 4-bits Trimming Resistor
Konferenz: SMACD / PRIME 2021 - International Conference on SMACD and 16th Conference on PRIME
19.07.2021 - 22.07.2021 in online
Tagungsband: SMACD / PRIME 2021
Seiten: 4Sprache: EnglischTyp: PDF
Barteselli, Edoardo; Baschirotto, Andrea (Physics Department “G.Occhialini” University of Milano - Bicocca, Milan, Italy)
Sant, Luca; Gaggl, Richard (Infineon Technologies Villach, Austria)
Natural bandgaps produce 1.25V reference voltage that does not operate in low-voltage applications. This paper presents a current-mode bandgap reference circuit operating down to 1V supply (nominal = 1.2V) with low temperature coefficient, low power consumption, high Power-Supply-Rejection (PSR) and high performance robustness for industrial production in the consumer microphones field. The voltage reference is generated by the sum of two currents over a matched resistor: one current is proportional to VEB, the other one is proportional to VT. In 65nm node, a 600mV bandgap (BG) reference voltage consumes 5.2muW (4.3muA) at 1.2V supply. The simulated PSR is -91dB, -43dB and -29dB at DC, 1kHz and 10kHz respectively. Montecarlo simulations show a variation of 1% at 3sigma after 4-bits trimming over a temperature range between -40 degC and 100 degC without any high-order curvature compensation, performing 5ppm/degC temperature coefficient.