CuO/Al reactive multilayers as internal heat source for wafer bonding

Konferenz: MikroSystemTechnik Kongress 2021 - Kongress
08.11.2021 - 10.11.2021 in Stuttgart-Ludwigsburg, Deutschland

Tagungsband: MikroSystemTechnik Kongress 2021

Seiten: 4Sprache: EnglischTyp: PDF

Vogel, Klaus; Roscher, Frank; Braun, Silvia; Wiemer, Maik; Kuhn, Harald (Fraunhofer Institute for Electronic Nano Systems ENAS, Chemnitz, Germany)
Zimmermann, Sven (Technische Universität Chemnitz, Center for Microtechnologies, Chemnitz, Germany)

The paper focuses on the new CuO/Al oxide based integrated reactive material systems (oiRMS) as internal heat source for wafer bonding application. Starting with the deposition via magnetron sputtering on 200 mm Si and glass wafers as well as the patterning of the bond frames by lift-off lithography, the wafers are bonded with a modified, commercially available wafer bonder and analysed by scanning acoustic microscopy. The reliability assessment is carried out, combining thermal cycling between -45 °C and 125 °C with shear tests. Both Si-Si and Si-glass show no significant change of the measured shear strength after 500, 1000 and 1500 thermal cycles in comparison to the reference measurements.