Fabrication and Characterization of Sensitive Piled Semiconductor Diodes as Mid-Infrared Pyro-Detectors

Konferenz: MikroSystemTechnik Kongress 2021 - Kongress
08.11.2021 - 10.11.2021 in Stuttgart-Ludwigsburg, Deutschland

Tagungsband: MikroSystemTechnik Kongress 2021

Seiten: 4Sprache: EnglischTyp: PDF

Kovatsch, Christoph; Bartl, Ulf; Grille, Thomas; Fant, Andrea; Ostermann, T.; Aschauer, Elmar; Stocker, Gerd (Infineon Technologies Austria AG, Villach, Austria)
Zangl, Hubert (Universität Klagenfurt, Klagenfurt, Germany)

This work reports on the evaluation of an IR detector based on piled semiconductor diodes used within a mid-IR gas sensor system. Furthermore, the manufacturing process of the device is explained, as well as it is demonstrated by measurement that a concatenation of diodes can provide the necessary temperature sensitivity for the application as an IR detector. Therefore, stating the advantages of CMOS MEMS fabrication leading to a cost-efficient production of the detector-sensor-system and a thermal isolation of the pn-junction array by placing it on a Si3N4 based membrane. A resulting forward bias sensitivity in a range of up to 22.50 mV/K can be observed.