Large area energy filter membranes for effective doping of silicon and silicon-carbide substrates through high-energy implantation

Konferenz: MikroSystemTechnik Kongress 2021 - Kongress
08.11.2021 - 10.11.2021 in Stuttgart-Ludwigsburg, Deutschland

Tagungsband: MikroSystemTechnik Kongress 2021

Seiten: 4Sprache: EnglischTyp: PDF

Steinbach, Tamas; Burghartz, Joachim N.; Letzkus, Florian (Institut für Mikroelektronik IMS-Chips, Stuttgart, Germany)
Akhmadaliev, Shavkat (Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany)
Csato, Constantin; Krippendorf, Florian (mi2 Factory GmbH, Jena, Germany)
Gerold, Marcel; Koch, Robert; Rueb, Michael (mi2 Factory GmbH, Jena, Germany & Ernst-Abbe-Hochschule Jena, Jena, Germany)

In this work we present the current state of large area energy filter membranes for the effective doping of silicon (Si) - and silicon carbide (SiC) substrates. The introduction of the first large area energy filter membranes on a 150mm SOI Wafer was in 2020 and we further developed the application fields and evaluated the corresponding structures. We will present in this work the development of a multi-level Si-energy filter, which is used for the creation of hydrogen-related donors (HDs). Additionally, the fabrication process will be discussed and a simulation of a multi-level implantation will be presented and discussed.