Rapid thermal annealing and reduction process monitoring of graphene oxide thin film on chip

Konferenz: Mikro-Nano-Integration - 9. GMM-Workshop
21.11.2022 - 22.11.2022 in Aachen, Germany

Tagungsband: GMM-Fb. 105: Mikro-Nano-Integration

Seiten: 4Sprache: EnglischTyp: PDF

Amiri, Hesam (Institute of Materials in Electrical Engineering 1, RWTH Aachen University, Germany & Department of Chemistry, Materials and Chemical Engineering Giulio Natta, Politecnico di Milano, Italy)
Nikookhesal, Aidin; Murugan, Divagar; Cao, Yuan; Vu, Xuan-Thang; Schnakenberg, Uwe; Ingebrandt, Sven; Pachauri, Vivek (Institute of Materials in Electrical Engineering 1, RWTH Aachen University, Germany)
Scholz, Stefan; Frentzen, Michael; Knoch, Joachim (Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Germany)
Sai, V V Raghavendra (Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai, India)
Narayanan, Madaboosi S. (Department of Biotechnology, Indian Institute of Technology Madras, Chennai, Tamil Nadu, India)

Graphene oxide (GO) is considered as a cost-effective source among the graphene-based materials for various device platforms after its reduction to reduced graphene oxide (rGO). For GO reduction, thermal annealing is a relatively convenient method compatible with top-down batch fabrication processes under precise parameter control. In this work, the influence of temperature changes up to 750 °C over reduction of large area GO thin films is addressed in a systematic manner. For this, the dielectric properties such as electrical and optical permittivity of rGO are characterized using high-precision electrical impedance spectroscopy and spectroscopic ellipsometry, while following the reduction process using Raman spectroscopy. To realize the study platform, GO thin films were prepared, micro-patterned and electrically connected using a standard top-down lithography processes. The optical and electrical permittivity are found to be inversely related to the reduction temperature.