Developments and trends for Silicon Carbide based power devices

Konferenz: Baulemente der Leistungselektronik und ihre Anwendungen 2023 - ETG-Fachtagung
20.06.2023-21.06.2023 in Bad Nauheim, Germany

Tagungsband: ETG-Fb. 171: Bauelemente der Leistungselektronik und ihre Anwendungen 2023

Seiten: 8Sprache: EnglischTyp: PDF

Mashaly, Aly; Kasko, Igor; Felgemacher, Christian (ROHM Semiconductor GmbH, Willich/Nuremberg, Germany)

After decades of silicon dominance as a major semiconductor material in electronics, new semiconductor materials like silicon carbide and gallium nitride enter the device market, especially in power electronics. This big step into the market has been enabled by the major improvements in the quality of the substrates needed for processing semiconductors devices as well as by progress in design and technology development for power devices. For high-voltage and high-power devices, silicon carbide became a first choice. The journey from basic material to power devices will be presented and discussed including the status and trends of basic material as well as of most important power device types.