Low half-wave-voltage and high-bandwidth thin-film lithium niobate electro-optic modulator

Inhalt:
We successfully prepared monolithically integrated TFLN electro-optic modulators that feature a CMOS-compatible bias voltage, support data rates up to 110GHz and half-wave-voltage down to 2V. Our study high lights the potential of the proposed modulators for low driving-voltage and high-perfor-mance optical communication systems.