Plasma deposited and evaporated thin resists for template fabrication

Konferenz: EMLC 2006 - 22nd European Mask and Lithography Conference
23.01.2006 - 26.01.2006 in Dresden, Germany

Tagungsband: EMLC 2006

Seiten: 5Sprache: EnglischTyp: PDF

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Lavallée, Eric; Beauvais, Jacques; Mangoua, Bertrand Takam; Drouin, Dominique (Quantiscript inc., 2500 boul., Université, J1K 2R1, Canada)

In this paper, we demonstrate electron beam lithography at energies ranging from 2 keV to 100 keV, on sub-100 nm thick resists. Such uniform and thin electron beam sensitive films can be deposited by evaporation or by plasma deposition. Two examples of such resists are studied, QSR-5 which is a negative sterol based evaporated resist and QPR-P50 which is a positive PECVD deposited fluoropolymer resist. AFM measurements demonstrate surface roughness smaller then 3 nm for QSR-5 and 0.7 nm for QPR-P50. In both cases, 50 nm features or better are patterned using electron beam lithography on a template blank consisting of a glass substrate, coated with a 10 nm thick Cr transfer layer and a resist layer. LER (3 σ) is measured to be less then 8% for 50 nm wide lines in QSR-5 and of approx. 10% for 50 nm wide lines in QPR-P50.